An Mn3Sn homo-junction enables efficient field-free full switching of chiral antiferromagnets with greatly reduced power consumption, advancing their potential for energy-efficient magnetic memory devices with advantages of ultradense integration and ultrafast speed.
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Reporting by Chance Townsend, Caitlin Welsh, Sam Haysom, Amanda Yeo, Shannon Connellan, Cecily Mauran, Mike Pearl, and Adam Rosenberg contributed to this article.
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